Method for Low-Temperature Deposition of Boron Carbo-Nitride as a Barrier and Etch Stop for Copper Interconnect Manufacturing

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Description

A method of forming boron carbo-nitride layer for use as a barrier and etch stop layer in copper interconnect structures used in integrated circuit manufacturing has been developed. The boron carbo-nitride films are deposited by a thermal chemical vapor deposition (CVD) process at temperatures below 450° Celsius to minimize thermal exposure of substrate. The films are deposited conformally on interconnect structures and offer desirable electrical properties with a dielectric constant less than 4.


Benefits

This invention solves the problem of reducing the capacitance associated with interconnect insulating films by offering a lower dielectric constant material and eliminating substrate damage associated with plasma-enhanced CVD technologies.


Features

  • Films with dielectric constant less than 4 can be deposited using thermal CVD at low temperatures (less than 450°C), whereas the state-of-the-art uses plasma enhanced CVD.
  • A thermal CVD route offers the opportunity for more conformally deposited films and does not cause substrate damage that is associated with a plasma enhanced process.

For further information please contact

University of Texas,
Austin, USA
Website : www.otc.utexas.edu